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by Mike Zazaian September 11, 2006 - 3:21pm, No Comments

Samsung's NAND Flash Peaks at 256GB

A new technology from Samsung could store thousands of high-res photos in your next digital camera.

Samsung’s new 40 nanometer manufacturing process could allow flash memory to grow up to 1,000 times larger than was possible just a few years ago. Their first production chip, a 32GB model, will include Charge Trap Flash (CTF) architecture, a technology that increases the reliability of shock-prone flash memory by sharply reducing inter-cell noise levels. NAND allows Samsung to eventually reduce chip thickness to 20nm down the road, making a 256GB chip a possibility within the next few years

Floating Gate, the technology around which previous flash devices were manufactured, was devised in 1989 by the Toshiba corporation. The older manufacturing proces allowed a minimum thickness of 50nm with a maximum chip size of 16GB, half of what is currently possible with Samsung’s NAND.

Based on the current 40nm process, NAND chips will be available in 32GB and 64GB versions, allowing the portable media market to manufacture smaller, faster devices with the same storage size as larger devices that use slower micro hard drives.

[via Samsung]